Efficient Power Conversion Launches 100V GaN Transistor Optimized for Solar Maximum Power Point Tracking
EPC Shatters GaN On-Resistance Record with Groundbreaking 1 mΩ EPC2361 FET
EPC, a leading innovator in enhancement-mode gallium nitride (GaN) power FETs and ICs, unveils the revolutionary EPC2361, boasting the industry's lowest on-resistance GaN FET at a mere 1 milli-ohm. This groundbreaking device delivers double the power density compared to its predecessors, paving the way for a new era of compact and efficient power electronics.
The EPC2361 stands out with its extraordinarily low RDS(on), clocking in at a mere 1 milli-ohm within a thermal QFN package that features an exposed top for improved heat dissipation. Its compact dimensions of 3 mm by 5 mm allow for a highly efficient use of space. The maximum RDS(on) x Area of just 15 milli-ohm*mm² outperforms similar 100 V silicon MOSFETs by a factor of more than five, making it an industry game-changer.
BonChip Electronics, a trusted distributor of the entire EPC product line, is your one-stop shop for all your GaN needs. We offer the complete EPC portfolio, exceptional sales support, efficient order processing, and convenient delivery options. Contact us today to explore how the EPC2361 can empower your next power design project.
Unmatched Performance and Efficiency:
The EPC2361 features:
- Ultra-low on-resistance (RDS(on)) of just 1 milli-ohm: This translates to significantly higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation.
- Thermally enhanced QFN package: This package boasts an exposed top and a compact footprint (3 mm x 5 mm), allowing for superior thermal performance and space optimization.
- Maximum RDS(on) x Area of only 15 milli-ohm*mm2: This is over five times smaller than comparable 100 V silicon MOSFETs, further highlighting its exceptional efficiency.
Ideal for Diverse Applications:
The EPC2361's unparalleled performance makes it ideal for various demanding applications, including:
- High-power PSU AC-DC synchronous rectification
- High-frequency DC-DC conversion for data centers
- Motor drives for eMobility, robotics, and drones
- Solar MPPTs
Accelerated Design and Evaluation:
To simplify the evaluation process and expedite time-to-market, EPC also introduces the EPC90156 development board. This half-bridge board features the EPC2361 and is designed for easy evaluation with its:
- 100 V maximum device voltage
- xx A maximum output current (to be specified)
- Compact size (2" x 2")
- Pre-populated critical components for optimal performance
Alex Lidow, CEO and co-founder of EPC, emphasizes the significance of this breakthrough: "Our new 1 mΩ GaN FET pushes the boundaries of GaN technology, empowering our customers to create power electronics systems that are more efficient, compact, and reliable."
Embrace the Future of Power Electronics with BonChip Electronics and the revolutionary EPC2361. Contact us today to learn more!
Primary Keywords: EPC, GaN, Power Electronics, Efficiency, Power Density, EPC2361, BonChip Electronics, Development Board, eMobility, Data Centers
